Philips Semiconductors
Hands free IC
Product specification
TEA1094; TEA1094A
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
thermal resistance from junction to ambient in free air
TEA1094
TEA1094A
TEA1094T
TEA1094AT
TEA1094AM
VALUE
45
50
70
75
104
UNIT
K/W
K/W
K/W
K/W
K/W
CHARACTERISTICS
VBB = 5 V; VGND = 0 V; f = 1 kHz; Tamb = 25 °C; MUTET = LOW; PD = LOW (TEA1094A only); RL = 50 Ω; RVOL = 0 Ω;
measured in test circuit of Fig.12; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Supply (VBB, GND and PD)
VBB
supply voltage
IBB
current consumption from pin VBB
POWER-DOWN INPUT PD (TEA1094A ONLY)
VIL
VIH
IPD
IBB(PD)
LOW level input voltage
HIGH level input voltage
input current
current consumption from pin VBB
in power-down condition
PD = HIGH
PD = HIGH
3.3
−
12.0
V
−
3.1 4.4
mA
VGND − 0.4 −
1.5
−
−
2.5
−
180
0.3
V
VBB + 0.4 V
5
µA
240
µA
Microphone channel (MIC, GAT, MOUT, MUTET and MICGND)
MICROPHONE AMPLIFIER
|Zi|
input impedance between
pins MIC and MICGND
Gvtx
voltage gain from pin MIC to
VMIC = 1 mV (RMS)
MOUT in transmit mode
∆Gvtxr
∆GvtxT
∆Gvtxf
voltage gain adjustment with RGAT
voltage gain variation with
temperature referenced to 25 °C
voltage gain variation with
frequency referenced to 1 kHz
VMIC = 1 mV (RMS);
Tamb = −25 to +75 °C
VMIC = 1 mV (RMS);
f = 300 to 3400 Hz
Vnotx
noise output voltage at pin MOUT
pin MIC connected to
MICGND through 200 Ω in
series with 10 µF;
psophometrically weighted
(P53 curve)
17
13
−15.5
−
−
−
20 23
15.5 18
−
+15.5
±0.3 −
±0.3 −
−100 −
kΩ
dB
dB
dB
dB
dBmp
1996 Jul 15
14