Philips Semiconductors
Low voltage versatile telephone
transmission circuit with dialler interface
Product specification
TEA1067
PARAMETER
Gain variation with frequency
at f = 300 Hz
and f = 3400 Hz
Gain variation with temperature
at −25 °C
and + 75 °C
Dual-tone multi-frequency
input DTMF
Input impedance
Voltage gain from DTMF to LN
Gain variation with frequency
at f = 300 Hz and f = 3400 Hz
Gain variation with temperature
at −25 °C and +75 °C
Gain adjustment
GAS1 and GAS2
Gain variation of the
transmitting amplifier by
varying R7 between GAS1
and GAS2
Sending amplifier output LN
Output voltage
Noise output voltage
Receiving amplifier input IR
Input impedance
CONDITION
w.r.t 800 Hz
w.r.t. 25 °C
without R6;
Iline = 50 mA
Iline = 15 mA;
R7 = 68 kΩ
w.r.t. 800 Hz
w.r.t. 25 °C
Iline = 50 mA
Iline = 15 mA
THD = 2%
THD = 10%
Iline = 4 mA;
THD = 10%
Iline = 7 mA;
THD = 10%
Iline = 15 mA;
R7 = 68 kΩ;
200 Ω between
MIC− and MIC+;
psophometrically
weighted (P53 curve)
SYMBOL
∆Gvf
∆GvT
Zi
Gv
∆Gvf
∆GvT
∆Gv
VLN(rms)
VLN(rms)
VLN(rms)
VLN(rms)
Vno(rms)
Zi
MIN.
−0.5
−
16.8
24.5
−0.5
−
−8
−
1.9
−
−
−
17
TYP.
± 0.2
± 0.2
20.7
25.5
±0.2
±0.2
−
1.9
2.2
0.8
1.4
−72
21
MAX. UNIT
+0.5
dB
−
dB
24.6
kΩ
26.5
dB
+0.5
dB
−
dB
0
dB
−
V
−
V
−
V
−
V
−
dBmp
25
kΩ
June 1990
12