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TEA1065T View Datasheet(PDF) - Philips Electronics

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TEA1065T Datasheet PDF : 28 Pages
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Philips Semiconductors
Versatile telephone transmission circuit with
dialler interface
Product specification
TEA1065
SYMBOL
PARAMETER
CONDITIONS
Gain adjustment GAR (pin 6)
Gv
receiving amplifier, gain
adjustment range
Mute input MUTE (pin 20)
VIH
VIL
IMUTE
Gv
input voltage HIGH
input voltage LOW
input current
change of microphone amplifier
gain
Gv
voltage gain from DTMF input
to QR+ or QR
Power-down input PD (pin 18)
VIH
input voltage HIGH
VIL
input voltage LOW
IPD
input current
Automatic gain control input AGC (pin 23)
Gv
controlling the gain from IR to
QR+, QRand the gain from
MIC+, MICto LN; gain control
range with respect to
Iline = 15 mA
Iline
highest line current for
maximum gain
Iline
lowest line current for minimum
gain
Gv
change of gain between
Iline = 15 and 35.5 mA
Current limiting input CURL (pin 15)
VBE
base-emitter voltage drop of
internal transistor
HFE
current gain of internal
transistor
IC(max)
maximum collector current of
internal transistor
MUTE = HIGH
MUTE = HIGH;
R4 = 100 k
single-ended; RT = 300
R6 = 118 k
see Fig.13;
IC = 50 µA = IDOC
see Fig.13;
IC = 50 µA = IDOC
see Fig.13
Bandgap reference voltage output VBG (pin 12)
VBG
reference voltage
IBG
output drive capability
ZO
output impedance
note 1
MIN.
11
1.5
19
1.5
-
-
5.5
60
100
TYP.
8
70
17
-
-
2.5
5.9
28
50
-1.5
0.7
120
1.22
-
12
MAX.
+8
VCC
0.3
15
15
VCC
0.3
5.0
6.3
2
+50
UNIT
dB
V
V
µA
dB
dB
V
V
µA
dB
mA
mA
dB
V
mA
V
µA
March 1994
17
 

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