Philips Semiconductors
Versatile telephone transmission circuit with
dialler interface
Product specification
TEA1065
SYMBOL
PARAMETER
CONDITIONS
MIN.
Transmitting amplifier output LN (pin 1)
VLN(rms) output voltage (RMS value)
Vno(rms)
noise output voltage (RMS
value)
Iline = 15 mA
dtot = 2%
1.9
dtot = 10%
−
Iline = 15 mA;
−
R7 = 68 kΩ;
pin 7 and 8 open-circuit
psophometrically
weighted (P53 curve);
control transistor included
(MOS BUK554 type see
Fig.18)
Receiving amplifier input IR (pin 17)
ZI
input impedance
Receiving amplifier outputs QR+ and QR− (pin 5 and 4)
ZO
output impedance
Gv
voltage gain
∆Gvf
variation with frequency
referred to 800 Hz
Iline = 15 mA; R4 = 100 kΩ
single-ended; RT = 300 Ω
differential; RT = 600 Ω
f = 300 to 3400 Hz
∆GvT
VO(rms)
variation with temperature
referred to 25 °C
output voltage (RMS value)
without R6; Iline = 50 mA;
Tamb = −25 to +75 °C
Iline = 15 mA; THD = 2%;
17
−
30
36
−0.5
−
TYP.
2.3
2.6
−68
21
4
31
37
±0.2
±0.2
MAX.
−
−
−
25
−
32
38
+0.5
−
UNIT
V
V
dBmp
kΩ
Ω
dB
dB
dB
dB
VO(rms)
noise output voltage (RMS
value)
March 1994
sinewave drive;
R4 = 100 kΩ
single-ended; RT = 150 Ω 0.3
0.38
−
V
differential; RT = 450 Ω
0.56
0.72
−
V
differential; CT = 60 nF; 0.87
1.07
−
V
(1500 Ω series resistor);
f = 3400 Hz
Iline = 30 mA; differential; 1.02
1.22
−
V
CT = 60 nF;
(1500 Ω series resistor);
f = 3400 Hz
Iline = 15 mA;
R4 = 100 kΩ
single-ended; RT = 300 Ω −
50
−
µV
differential; RT = 600 Ω
−
100
−
µV
16