Philips Semiconductors
Low voltage versatile telephone transmission circuit
with dialler interface and transmit level dynamic limiting
Product specification
TEA1064A
PARAMETER
Voltage gain (see Fig.22)
Variation of Gv with frequency,
referred to 0.8 kHz
Variation of Gv with temperature,
referred to 25 °C
DTMF input (pin 12)
Input impedance
Voltage gain (see Fig.22)
Variation of Gv with frequency,
referred to 0.8 kHz
Variation of Gv with temperature,
referred to 25 °C
Gain adjustment inputs GAS1, GAS2
(pins 2, 3)
Transmitting amplifier,
gain adjustment range
Sending amplifier output LN (pin 1)
Dynamic limiter
Output voltage swing
(peak-to-peak value)
Total harmonic distortion
Output voltage swing
(peak-to-peak value)
CONDITIONS
Iline = 15 mA;
R7 = 68 kΩ
SYMBOL MIN. TYP. MAX. UNIT
Gv
51
52
53
dB
f = 300 and 3400 Hz ∆Gvf
−0.5 ± 0.1 + 0.5 dB
without R6;
Iline = 50 mA;
Tamb = −25 to + 75 °C ∆GvT
−
± 0.2 −
dB
Zi
Iline = 15 mA;
R7 = 68 kΩ
Gv
f = 300 and 3400 Hz ∆Gvf
f = 697 and 1633 Hz ∆Gvf
Iline = 50 mA;
Tamb = −25 to + 75°C ∆GvT
16.8 20.7 24.6 kΩ
25
26
27
dB
−0.5 ± 0.1 + 0.5 dB
−0.2 ± 0.05 + 0.2 dB
−
± 0.2 0.5 dB
∆Gv
−8
−
+ 0 dB
Iline = 15 mA;
R7 = 68 kΩ;
Ip = 0 mA;
Vi(rms) = 3.6 mV
Vi = 3.6 mV + 10 dB
Vi = 3.6 mV + 15 dB
VLN(p-p)
THD
THD
Vi = 3.6 mV + 10 dB
Ip = 2 mA
Ip = 4 mA
Ip = 0 mA;
Iline = 7 mA
Ip = 0 mA;
Iline = 4 mA
VLN(p-p)
VLN(p-p)
VLN(p-p)
VLN(p-p)
3.6 4.0 4.5 V
−
1.5 2.0 %
−
2.8 10.0 %
3.7 3.95 4.2 V
3.0 3.25 3.5 V
−
2
−
V
−
1
−
V
March 1994
20