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TDA7575B View Datasheet(PDF) - STMicroelectronics

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TDA7575B Datasheet PDF : 32 Pages
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TDA7575B
Electrical specifications
Table 4.
Symbol
Electrical characteristics (continued)
(VS = 14.4V; f=1KHz; RL=4Ω; Tamb= 25°C unless otherwise specified)
Parameter
Test condition
Min. Typ.
Po Output power
Single channel configuration
(1Ω pin >2.5V); RL = 1Ω;
THD 3%
Max. power(1)
THD Total harmonic distortion
PO = 1-12W; STD MODE
HE MODE; PO = 1-2W
HE MODE; PO = 4-8W
PO = 1-12W, f = 10kHz
RL = 2; HE MODE; Po = 3W
Single channel configuration
(1Ω pin >2.5V); RL = 1; PO = 4-
30W
CT
RIN
GV1
ΔGV1
GV2
ΔGV2
Cross talk
Input impedance
Voltage gain 1 (default)
Voltage gain match 1
Voltage gain 2
Voltage gain match 2
EIN1 Output noise voltage gain 1
Rg = 600Ω; PO = 1W
Rg = 600Ω; Gv = 26dB
filter 20 to 22kHz
EIN2 Output noise voltage gain 2
Rg = 600Ω; Gv = 12dB
filter 20 to 22kHz
SVR Supply voltage rejection
BW Power bandwidth
f = 100Hz to 10kHz; Vr = 1Vpk;
Rg = 600Ω
(-3dB)
ASB
ISB
AM
VOS
VAM
CMRR
VMC
Stand-by attenuation
Stand-by current consumption Vst-by = 0V
Mute attenuation
Offset voltage
Mute & play
Min. supply mute threshold
Input CMRR
VCM = 1Vpk-pk; Rg = 0 Ω
Maximum common mode input
level
f = 1kHz
SR Slew rate
ΔVOS
During mute ON/OFF output
offset voltage
During St-By ON/OFF output
offset voltage
ITU R-ARM weighted
see Figure 23
80
84
140 150
0.03
0.03
0.5
0.15
0.03
0.02
60
75
60 100
25
26
-1
0
11
12
-1
0
40
15
50
60
100
90 100
2
80
90
-45
0
7
7.5
56
60
1.5
4
-10
-10
Max. Unit
W
0.1
0.1
%
0.5
%
0.5
%
0.1
%
dB
130 KΩ
27
dB
1
dB
13
dB
1
dB
60
μV
25
μV
dB
KHz
dB
10
μA
dB
45
mV
8
V
dB
1 Vrms
V/μs
+10 mV
+10 mV
7/32
 

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