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E-TDA7512FTR View Datasheet(PDF) - STMicroelectronics

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Description
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E-TDA7512FTR Datasheet PDF : 45 Pages
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TDA7512F
Electrical specifications
Table 5. Electrical characteristics (continued)
Symbol
Parameter
Test conditions
Reference voltages
VREF1
VREF2
Internal reference voltage
Internal reference voltage
Wide band RF AGC
V7-9
Lower threshold start
V7-9
Upper threshold start
Narrow band IF & keying AGC
V60
Lower threshold start
V60
Upper threshold start
V60
Lower threshold start with
KAGC
V35
Start point KAGC
D
Control range KAGC
RIN
Input resistance
CIN
Input capacitance
AGC time constant output
IREF1 = 0 mA
IREF2 = 0 mA
V10 = 2.5 V
V10 = 2.5 V
KAGC = off, V7-9 = 0 mVRMS
KAGC = off, V7-9 = 0 mVRMS
KAGC = max, V7-9 = 0 mVRMS,
ΔfIF = 300 kHz
KAGC = max, V7-9 = 0 mVRMS,
ΔfIF = 300 kHz
fIF1 generate FSW level at V35
ΔV35= +0.4 V
-
-
V10
Max. AGC output voltage
V10
Min. AGC output voltage
I10
Min. AGC charge current
I10
Max. AGC discharge
current
AGC pin diode driver output
I6
AGC OUT, current min.
I6
AGC OUT, current max.
I/Q mixer 1 (10.7MHz)
RIN
CIN
ROUT
V7,9
gm
F
Input resistance
Input capacitance
Output resistance
Input dc bias
Conversion
transconductance
Noise figure
V7-9 = 0 mVRMS
V7-9 = 50 mVRMS
V7-9 = 0 mVRMS,; V10 = 2.5 V
V7-9 = 50 mVRMS,; V10 = 2.5 V
V7-9 = 0 mVRMS, V6 = 2.5 V
V7-9 = 50 mVRMS, V6 = 2.5 V
differential
differential
differential
-
-
400 Ω generator resistance
Min. Typ. Max. Unit
-
5
-
V
-
2.5
-
V
-
85
-
dBµV
-
96
-
dBµV
-
86
-
dBµV
-
98
-
dBµV
-
98
-
dBµV
-
3.6
-
V
-
16
-
dB
-
10
-
kΩ
-
2.5
-
pF
-
VREF1
+VBE
V
-
0.5
V
-
-12.5
-
µA
-
1.25
-
mA
-
50
-
µA
-
-20
-
mA
-
10
-
kΩ
-
4
-
pF
100
-
kΩ
-
3.2
-
V
-
17
-
mS
-
3
-
dB
Doc ID 12668 Rev 2
11/45
 

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