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TD62004AF View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
TD62004AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Toshiba
Toshiba Toshiba
TD62004AF Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TD62001~004P/AP/F/AF
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted)
CHARACTERISTIC
Output Leakage
Current
AP, AF
F
P
CollectorEmitter Saturation Voltage
DC Current Transfer Ratio
Input Current
(Output On)
TD62002
TD62003
TD62004
Input Current
(Output Off)
P
AP, F, AF
TD62002
Input Voltage
(Output On)
TD62003
TD62004
AP, AF
Clamp Diode
Reverse Current
F
P
Clamp Diode Forward Voltage
Input Capacitance
TurnOn Delay
P, F
AP, AF
TurnOff Delay
P, F
AP, AF
SYMBOL
ICEX
VCE (sat)
hFE
IIN (ON)
IIN (OFF)
VIN (ON)
IR
VF
CIN
tON
tOFF
TEST
CIR
CUIT
TEST CONDITION
VCE = 50 V, Ta = 25°C
VCE = 50 V, Ta = 85°C
1 VCE = 35 V, Ta = 25°C
VCE = 35 V, Ta = 85°C
VCE = 35 V, Ta = 25°C
VCE = 35 V, Ta = 75°C
IOUT = 350 mA, IIN = 500 µA
2 IOUT = 200 mA, IIN = 350 µA
IOUT = 100 mA, IIN = 250 µA
2 VCE = 2 V, IOUT = 350 mA
VIN = 20 V, IOUT = 350 mA
3 VIN = 2.4 V, IOUT = 350 mA
VIN = 9.5 V, IOUT = 350 mA
4 IOUT = 500 µA, Ta = 75°C
IOUT = 500 µA, Ta = 85°C
IOUT = 350 mA
IOUT = 200 mA
5
VCE = 2 V
hFE = 800
IOUT = 350 mA
IOUT = 200 mA
IOUT = 350 mA
IOUT = 200 mA
VR = 50 V, Ta = 25°C
VR = 50 V, Ta = 85°C
6 VR = 35 V, Ta = 25°C
VR = 35 V, Ta = 85°C
VR = 35 V, Ta = 25°C
VR = 35 V, Ta = 75°C
7 IF = 350 mA
VOUT = 35 V, RL = 87.5
8 CL = 15 pF
VOUT = 50 V, RL = 125
CL = 15 pF
VOUT = 35 V, RL = 87.5
8 CL = 15 pF
VOUT = 50 V, RL = 125
CL = 15 pF
MIN
1000
50
50
TYP.
1.3
1.1
0.9
1.1
0.4
0.8
65
65
15
0.1
0.1
0.2
0.2
MAX
50
100
50
100
50
100
1.6
1.3
1.1
1.7
0.7
1.2
13.7
11.4
2.6
2.0
4.7
4.4
50
100
50
100
50
100
2.0
UNIT
µA
V
mA
µA
V
µA
V
pF
µs
4
2001-06-27
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