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TD62004P View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
TD62004P TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Toshiba
Toshiba Toshiba
TD62004P Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
RECOMMENDED OPERATING CONDITIONS
(Ta = 40~85°C and Ta = 30~75°C for only TypeP)
TD62001~004P/AP/F/AF
CHARACTERISTIC
SYMBOL
CONDITION
MIN TYP. MAX UNIT
Output Sustaining
Voltage
P, F
AP, AF
VCE (SUS)
Output Current
AP
P
F, AF
IOUT
Tpw = 25 ms
7 Circuits
Ta = 85°C
Tj = 120°C
Input Voltage
Except
TD62001P /
AP / F / AF
Input Voltage
(Output On)
TD62002
TD62003
TD62004
TD62001
Input Voltage
(Output Off)
TD62002
TD62003
TD62004
Input Current
Only TD62001
Clamp Diode Reverse
P, F
Voltage
AP, AF
Clamp Diode Forward Current
P
Power Dissipation
AP
AF, F
VIN
VIN (ON)
IOUT = 400 mA
hFE = 800
VIN (OFF)
IIN
VR
IF
Ta = 85°C
PD
Ta = 85°C
0
0
Duty = 10%
0
Duty = 50%
0
Duty = 10%
0
Duty = 50%
0
Duty = 10%
0
Duty = 50%
0
0
14.5
2.8
6.2
0
0
0
0
0
(Note)
35
V
50
370
130
295 mA /
95
ch
233
70
24
V
24
24
V
24
0.6
7.4
V
0.7
1.0
10
mA
35
V
50
350 mA
0.6
0.76 W
0.325
Note: On glass epoxy PCB (30 × 30 × 1.6 mm Cu 50%)
3
2001-06-27
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