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TD62003P View Datasheet(PDF) - Toshiba
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TD62003P
TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
Toshiba
TD62003P Datasheet PDF : 13 Pages
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RECOMMENDED OPERATING CONDITIONS
(Ta =
−
40~85°C and Ta =
−
30~75°C for only Type
−
P)
TD62001~004P/AP/F/AF
CHARACTERISTIC
SYMBOL
CONDITION
MIN TYP. MAX UNIT
Output Sustaining
Voltage
P, F
AP, AF
V
CE (SUS)
Output Current
AP
P
F, AF
I
OUT
T
pw
= 25 ms
7 Circuits
Ta = 85°C
T
j
= 120°C
Input Voltage
Except
TD62001P /
AP / F / AF
Input Voltage
(Output On)
TD62002
TD62003
TD62004
TD62001
Input Voltage
(Output Off)
TD62002
TD62003
TD62004
Input Current
Only TD62001
Clamp Diode Reverse
P, F
Voltage
AP, AF
Clamp Diode Forward Current
P
Power Dissipation
AP
AF, F
V
IN
V
IN (ON)
I
OUT
= 400 mA
h
FE
= 800
V
IN (OFF)
I
IN
V
R
I
F
Ta = 85°C
P
D
Ta = 85°C
0
0
Duty = 10%
0
Duty = 50%
0
Duty = 10%
0
Duty = 50%
0
Duty = 10%
0
Duty = 50%
0
0
14.5
2.8
6.2
0
0
0
0
0
―
―
―
―
―
(Note)
―
―
35
V
―
50
―
370
―
130
―
295
mA /
―
95
ch
―
233
―
70
―
24
V
―
24
―
24
V
―
24
―
0.6
―
7.4
V
―
0.7
―
1.0
―
10
mA
―
35
V
―
50
―
350 mA
―
0.6
―
0.76 W
―
0.325
Note: On glass epoxy PCB (30 × 30 × 1.6 mm Cu 50%)
3
2001-06-27
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