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TD62002AP View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
TD62002AP TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Toshiba
Toshiba Toshiba
TD62002AP Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
SCHEMATICS (EACH DRIVER)
TD62001P / AP / F / AF
TD62002P / AP / F / AF
TD62001~004P/AP/F/AF
TD62003P / AP / F / AF
TD62004P / AP / F / AF
Note: The input and output parasitic diodes cannot be used as clamp diodes.
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Sustaining
Voltage
P, F
AP, AF
Output Current
Input Voltage
Input Current
Clamp Diode
Reverse Voltage
P, F
AP, AF
Clamp Diode Forward Current
P
Power Dissipation
AP
F, AF
Operating
Temperature
Storage Temperature
P
AP, F, AF
VCE (SUS)
IOUT
VIN (Note 1)
IIN (Note 2)
VR
IF
PD
Topr
Tstg
0.5~35
V
0.5~50
500
mA / ch
0.5~30
V
25
mA
35
V
50
500
mA
1.0
1.47
W
0.54 / 0.625
(Note 3)
30~75
°C
40~85
55~150
°C
Note 1: Except TD62001P / AP / F / AF
Note 2: Only TD62001P / AP / F / AF
Note 3: On glass epoxy PCB (30 × 30 × 1.6 mm Cu 50%)
2
2001-06-27
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