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TD62003APG View Datasheet(PDF) - Toshiba

Part NameDescriptionManufacturer
TD62003APG TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic Toshiba
Toshiba Toshiba
TD62003APG Datasheet PDF : 13 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TD62001~004APG/AFG
Electrical Characteristics (Ta = 25°C unless otherwise noted)
Characteristics
Ooutput leakage current
Collectoremitter saturation voltage
DC current transfer ratio
Input current (output on)
Input current (output off)
TD62002
TD62003
TD62004
TD62002
Input voltage (output on) TD62003
TD62004
Clamp diode reverse current
Clamp diode forward voltage
Input capacitance
Turnon delay
Turnoff delay
Symbol
Test
Circuit
Test Condition
Min Typ. Max Unit
ICEX
1 VCE = 50 V, Ta = 25°C
VCE = 50 V, Ta = 85°C
50
mA
100
IOUT = 350 mA, IIN = 500 mA
1.3
1.6
VCE (sat)
2 IOUT = 200 mA, IIN = 350 mA
1.1
1.3
V
IOUT = 100 mA, IIN = 250 mA
0.9
1.1
hFE
2 VCE = 2 V, IOUT = 350 mA
1000
VIN = 20 V, IOUT = 350 mA
1.1
1.7
IIN (ON)
3 VIN = 2.4 V, IOUT = 350 mA
0.4
0.7
mA
VIN = 9.5 V, IOUT = 350 mA
0.8
1.2
IIN (OFF)
4 IOUT = 500 mA, Ta = 85°C
50
65
mA
IOUT = 350 mA
13.7
IOUT = 200 mA
11.4
VIN (ON)
5
VCE = 2 V
hFE = 800
IOUT = 350 mA
IOUT = 200 mA
2.6
2.0
V
IOUT = 350 mA
4.7
IOUT = 200 mA
4.4
IR
6 VR = 50 V, Ta = 25°C
VR = 50 V, Ta = 85°C
50
mA
100
VF
7 IF = 350 mA
2.0
V
CIN
15
pF
tON
tOFF
8
VOUT = 50 V, RL = 125 W
CL = 15 pF
8
VOUT = 50 V, RL = 125 W
CL = 15 pF
0.1
ms
0.2
4
2002-12-11
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