TD352IDT View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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TD352IDT

Advanced IGBT/MOSFET Driver

STMicroelectronics 

TD352

Functional description

5.5

Desaturation protection

Desaturation protection ensures the protection of the IGBT in the event of overcurrent.

When the DESAT voltage goes higher than VH-2V, the TD352 OUT pin is driven low. The

fault state is only exited after a power-down and power-up cycle.

A programmable blanking time is used to allow enough time for IGBT saturation. Blanking

time is provided by an internal current source and external Cdes capacitor. The Tbdes

blanking time value is given by:

Tbdes = Vdes * Cdes / Ides

At VH=16V, Tbdes is approximately given by:

Tbdes (µs) = 0.056 * Cdes (pF)

5.6

Output stage

The output stage is able to sink/source 1.7 A/1.3 A (typical) at 25 °C and 1.0 A/0.75 A min.

over the full temperature range. This current capability is specified near the usual IGBT

Miller plateau.

5.7

Undervoltage protection

Undervoltage detection protects the application in the event of a low VH supply voltage

(during startup or a fault situation). During undervoltage, the OUT pin is driven low (active

pull-down for VH>2V, and passive pull-down for VH<2V).

Figure 3. Undervoltage protection

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Doc ID 11095 Rev 2

9/18

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