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TD352 View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
TD352 Advanced IGBT/MOSFET Driver ST-Microelectronics
STMicroelectronics ST-Microelectronics
TD352 Datasheet PDF : 18 Pages
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TD352
Functional description
5.5
Desaturation protection
Desaturation protection ensures the protection of the IGBT in the event of overcurrent.
When the DESAT voltage goes higher than VH-2V, the TD352 OUT pin is driven low. The
fault state is only exited after a power-down and power-up cycle.
A programmable blanking time is used to allow enough time for IGBT saturation. Blanking
time is provided by an internal current source and external Cdes capacitor. The Tbdes
blanking time value is given by:
Tbdes = Vdes * Cdes / Ides
At VH=16V, Tbdes is approximately given by:
Tbdes (µs) = 0.056 * Cdes (pF)
5.6
Output stage
The output stage is able to sink/source 1.7 A/1.3 A (typical) at 25 °C and 1.0 A/0.75 A min.
over the full temperature range. This current capability is specified near the usual IGBT
Miller plateau.
5.7
Undervoltage protection
Undervoltage detection protects the application in the event of a low VH supply voltage
(during startup or a fault situation). During undervoltage, the OUT pin is driven low (active
pull-down for VH>2V, and passive pull-down for VH<2V).
Figure 3. Undervoltage protection
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Doc ID 11095 Rev 2
9/18
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