TD350ETR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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TD350ETR

Advanced IGBT/MOSFET driver

STMicroelectronics 

TD350E

Table 5.

Symbol

Electrical characteristics (continued)

Parameter

Test condition

VOL3

VOH1

VOH2

VOH3

tr

tf

tpd_on

tpd_off

Δtw

Output low voltage at Iosink=500mA

Output high voltage 1

Output high voltage 2

Output high voltage 3

Rise time

T=25°C

Tmin<T<Tmax

Iosource=20 mA

Iosource=200 mA

Iosource=500 mA

CL=1nF, 10% to 90%

VL=0

VL=-10V

Fall time (2)

CL=1nF, 90% to 10%

VL=0

VL=-10V

Turn-on propagation delay

Turn-off propagation delay

Input to output pulse distortion

10% output change;

T=25°C

10% output change;

Tmin<T<Tmax

10% output change;

T=25°C

10% output change;

Tmin<T<Tmax

10% output change

Undervoltage lockout (UVLO)

UVLOH UVLO top threshold

UVLOL UVLO bottom threshold

Vhyst UVLO hysteresis

Supply current

UVLOH-UVLOL

Iin Quiescent current

Output=0 V, no load

1. Recommended capacitor range on VREF pin is 10 nF to 100 nF.

2. 2-step turn-off disabled

Electrical characteristics

Min

Typ

Max Unit

VH-2.5

VH-3.0

VH-4.0

VL+2.5 V

VL+3.0 V

V

V

V

130 ns

175 ns

400 500

75

ns

90

ns

600 ns

350

650 ns

350 450

570 ns

300

620 ns

25

50

120 ns

10

11

9

10

0.5

1

12

V

11

V

V

5

mA

Doc ID 018539 Rev 2

7/17

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