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TD350ID View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
TD350ID Advanced IGBT/MOSFET driver ST-Microelectronics
STMicroelectronics ST-Microelectronics
TD350ID Datasheet PDF : 17 Pages
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TD350
Table 5.
Symbol
Electrical characteristics (continued)
Parameter
Test condition
VOL3
VOH1
VOH2
VOH3
tr
tf
tpd_on
tpd_off
Δtw
Output low voltage at Iosink=500mA
T=25°C
Tmin<T<Tmax
Output high voltage 1
Iosource=20mA
Output high voltage 2
Iosource=200mA
Output high voltage 3
Iosource=500mA
Rise time
CL=1nF, 10% to 90%
VL=0
VL=-10V
Fall time (2)
CL=1nF, 90% to 10%
VL=0
VL=-10V
Turn-on propagation delay
Turn-off propagation delay
Input to output pulse distortion
10% output change;
T=25°C
10% output change;
Tmin<T<Tmax
10% output change;
T=25°C
10% output change;
Tmin<T<Tmax
10% output change
Under voltage lockout (UVLO)
UVLOH UVLO top threshold
UVLOL UVLO bottom threshold
Vhyst UVLO hysteresis
Supply current
UVLOH-UVLOL
Iin Quiescent current
Output=0V, no load
1. Recommended capacitor range on VREF pin is 10 nF to 100 nF.
2. 2 step turn-off disabled
Electrical characteristics
Min
Typ
Max Unit
VH-2.5
VH-3.0
VH-4.0
VL+2.5 V
VL+3.0 V
V
V
V
130 ns
175 ns
400 500
75
ns
90
ns
600 ns
350
650 ns
350 450
570 ns
300
620 ns
25
50
120 ns
10
11
9
10
0.5
1
12
V
11
V
V
5
mA
Doc ID 9525 Rev 6
7/17
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