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TD350IDT View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
TD350IDT Advanced IGBT/MOSFET driver ST-Microelectronics
STMicroelectronics ST-Microelectronics
TD350IDT Datasheet PDF : 17 Pages
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Electrical characteristics
4
Electrical characteristics
TD350
TA = -20 to 125 °C, VH=16 V, VL=-10 V (unless otherwise specified)
Table 5.
Symbol
Electrical characteristics
Parameter
Test condition
Min
Input
Vton IN turn-on threshold voltage
Vtoff IN turn-off threshold voltage
tonmin Minimum pulse width
Iinp IN input current
Voltage reference (1)
Vref Voltage reference
Iref Maximum output current
Desaturation protection
T=25°C
Tmin<T<Tmax
Vdes
Ides
Desaturation threshold
Source current
Fault output
tfault
VFL
Clamp
Delay for fault detection
FAULT low voltage
IFLsink=10mA
Vtclamp CLAMP pin voltage threshold
VCL Clamp low voltage
Off delay
T=25°C; ICLsink=500mA
Tmin<T<Tmax; ICLsink=500mA
Vtdel
Rdel
Voltage threshold
Discharge resistor
Off levels
I=1mA
Iblvoff
Violv
LVOFF peak input current (sink)
Offset voltage
Outputs
LVOFF=12V
LVOFF=12V
VOL1
VOL2
Output low voltage at Iosink=20mA
Output low voltage at Iosink=200mA
T=25°C
Tmin<T<Tmax
0.8
100
4.85
4.77
10
6.5
2.35
-0.3
Typ
Max Unit
1.0
V
4.0
4.2
V
135
220 ns
1
μA
5.00 5.15 V
5.22 V
mA
7.2
7.9
V
250
μA
500 ns
1
V
2.0
V
VL+2.5 V
VL+3.0 V
2.50 2.65 V
500 Ω
120
200 μA
-0.15
0
V
VL+0.35 V
VL+1.0 V
VL+1.5 V
6/17
Doc ID 9525 Rev 6
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