TD310ID View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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TD310ID

TRIPLE IGBT/MOS DRIVER WITH CURRENT SENSE

STMicroelectronics 

ELECTRICAL CHARACTERISTICS

VCC = 15V, Tamb = 25°C (unless otherwise specified)

Symbol

Parameter

ICC Supply Current with Inputs in High State

LOGIC INPUT (all inputs)

VIH

VIL

IIH

IIL

tdH, teL

tdL, teH

tli

High Input Voltage

Low Input Voltage

High Input Current

Low Input Current

Propagation Delay (10% input to 10% output)

Output Delay

Output Delay

Tmin. ≤ Tamb ≤ Tmax.

Input Inhibiting Time

tdd Differential Delay Time Between Channels

OUTPUT DRIVERS

Vsod

Sourcing Drop Voltage (A/B/C outputs)

Isource = 200mA

Vsid

Sinking Drop Voltage (A/B/C outputs)

Isink = 200mA

Vdem

Demagnetizing Drop Voltage (A/B/C outputs)

Idemag. = 100mA

Ropd Output Pull Down Resistor

ALARM OUTPUT

Is

Low Level Sinking Current

VO = 0.8V

Ish High Level Sinking Current

tA Alarm Output : Delay Time to Alarm Fall if Sense Input Triggered

SENSE INPUT

Vios Input Offset Voltage

tAi Inhibition Time if Sense Input Triggered

ts

Delay Time to Output Fall if Sense Input Triggered

All outputs inhibited

tsi Inhibition Time of Sense Input

Vshys Sense Hysteresis

OPERATIONAL AMPLIFIER

Vicm Common Mode Input Voltage Range

Vio Input Offset Voltage

GBP Gain Bandwidth Product

Avd Open Loop Gain

SR Slew Rate at Unity Gain (RL = 100kΩ, CL = 100pF, Vi = 3 to 7V)

STAND-BY

Vstdby Standby Mode Threshold Voltage

Istdby Standby Mode Supply Current

UNDER VOLTAGE LOCKOUT

Iadj Under Voltage Level Adjust Current

Vst1 Internal Stop Threshold (without external adjustment)

Vhys Threshold Hysteresis

TD310

Min. Typ. Max. Unit

1.5

2

mA

2

V

0.8

V

10

pA

10

pA

200 400

60

400

ns

100

ns

20

ns

3

V

5

V

2

V

47

kΩ

5

35

mA

1

µA

500

ns

20

mV

1

ms

600

ns

300

ns

40

mV

0 to VCC+ - 1.5

10

1

60

0.6

V

mV

MHz

dB

V/µs

0.3

1.1

V

30

µA

1

µA/V

10.7

13.3

V

0.8

V

3/9

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