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FQP14N15 View Datasheet(PDF) - Tripath Technology Inc.

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FQP14N15 Datasheet PDF : 34 Pages
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Tripath Technology, Inc. - Technical Information
Application Information
Figure 1 is a simplified diagram of one channel (Channel 1) of a TK2150 amplifier to assist in
understanding its operation.
TC2001
TP2150
BBM0 26
BBM1 25
OAOUT1 22
CI
RI
RF
V5
+
INV1 23 -
ROFB
+
AGND
OVER
CURRENT
DETECTION
9 Y1 17
51 OCS1HP
50 OCS1HN
RS
57 VBOOT1
48 HO1
RG
QO
47 HO1COM
V5
ROFA
Offset Trim
Circuit
COF
CA
BIASCAP 1
5V
MUTE 24
2.5V
V5
Processing
&
Modulation
RREF
REF 15
10 Y1B 16
VN10
44 LO1
OVER
CURRENT
DETECTION
45 LO1COM
54 OCS1LP
53 OCS1LN
RG
QO
RS
OCR1 7
VN10 41,43
VNN 42
V5 6
VN10
CSW
VNN
VNN
5V
AGND 5
CS
VNN
VPP
V5
V5
RVNN1
RVPP1
RVNN2
VNNSENSE 17
VPPSENSE 19
OVER/
UNDER
VOLTAGE
DETECTION
RVPP1
5V
CS
V5 21
AGND 20
16
OVER
CURRENT
DETECTION
OCR1
COCR
ROCR
V5
RFBA
6 FBKOUT1
7 FBKGND1
CFB
R FBB
8 HMUTE
RFBA
RFBC
RFBB
RFBC
F. BEAD
Analog
Ground
Power Ground
VPP
CS
DB
VN10
RB
CHBR
CB
0.1uF
+
CBAUX
OUTPUT
FILTER
RL
VNN
CS
Figure 1: Simplified TK2150 Amplifier
TK2150 Basic Amplifier Operation
The audio input signal is fed to the processor internal to the TC2001, where a switching pattern is
generated. The average idle (no input) switching frequency is approximately 700kHz. With an
input signal, the pattern is spread spectrum and varies between approximately 200kHz and
1.5MHz depending on input signal level and frequency. Complementary copies of the switching
pattern is output through the Y1 and Y1B pins on the TC2001. These switching patterns are input
to the TP2150 where they are level-shifted by the MOSFET drivers and then output to the gates
(HO1 and LO1) of external power MOSFETs that are connected as a half bridge. The output of
the half bridge is a power-amplified version of the switching pattern that switches between VPP
and VNN. This signal is then low-pass filtered to obtain an amplified reproduction of the audio
input signal.
The TC2001 processor is operated from a 5-volt supply. In the generation of the switching
patterns for the output MOSFETs, the processor inserts a “break-before-make” dead time
between the turn-off of one transistor and the turn-on of the other in order to minimize shoot-
through currents in the external MOSFETs. The dead time can be programmed by setting the
break-before-make control bits, BBM1 and BBM0. Feedback information from the output of the
half-bridge is supplied to the processor via FBKOUT1. Additional feedback information to
account for ground bounce is supplied via FBKGND1.
15
TK2150 – Rev. 1.0/12.02
 

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