FQP14N15 View Datasheet(PDF) - Tripath Technology Inc.

Part Name

Description

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FQP14N15

STEREO 200W (6Ω) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER USING DIGITAL POWER PROCESSINGtm TECHNOLOGY

Tripath Technology Inc. 

DD

DS

RPG

QB

DSW

LSW

CSW

RSWFB

CSWFB

Tripath Technology, Inc. - Technical Information

Drain diode. This diode must be connected from the drain of the high side output

MOSFET to the drain of the low side output MOSFET. This diode absorbs any high

frequency overshoots caused by the output inductor LO during high output current

conditions. In order for this diode to be effective it must be connected directly to the

drains of both the top and bottom side output MOSFET. A fast or ultra fast recovery

diode that can sustain the entire VPP-VNN voltage should be used here. In most

applications a 150V or greater diode must be used.

Source diode. This diode must be connected from the source of the high side

output MOSFET to the source of the low side output MOSFET. This diode absorbs

any high frequency undershoots caused by the output inductor LO during high output

current conditions. In order for this diode to be effective it must be connected

directly to the sources of both the top and bottom sides output MOSFETs. A fast or

ultra fast recovery diode that can sustain the entire VPP-VNN voltage should be

used here. In most applications a 150V or greater diode must be used.

Gate resistor for the output MOSFET for the switchmode power supply. Controls

the rise time, fall time, and reduces ringing for the gate of the output MOSFET for

the switchmode power supply.

Output MOSFET for the switchmode power supply to generate the VN10. This

output MOSFET must be a P channel device.

Flywheel diode for the internal VN10 buck converter. This diode also prevents

VN10SW from going more than one diode drop negative with respect to VNN. This

diode should be a Shottky or ultrafast rectifier.

VN10 generator filter inductor. This inductor should be sized appropriately so that

LSW does not saturate, and VN10 does not overshoot with respect to VNN during

TK2150 turn on.

VN10 generator filter capacitors. The high frequency capacitor (0.1uF) must be

located close to the VN10 pins (pin 41 and 43 of the TP2150) to maximize device

performance. The bulk capacitor (100uF) should be sized appropriately such that

the VN10 voltage does not overshoot with respect to VNN during TK2150 turn on.

VN10 generator feedback resistor. This resistor sets the nominal VN10 voltage.

With RSWFB equal to 1kΩ, the VN10 voltage generated will typically be 10V above

VNN.

VN10 generator feedback capacitor. This capacitor, in conjunction with RSWFB, filters

the VN10 feedback signal such that the loop is unconditionally stable.

12

TK2150 – Rev. 1.0/12.02

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