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TC1313-AM1EMF View Datasheet(PDF) - Microchip Technology

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TC1313-AM1EMF
Microchip
Microchip Technology Microchip
TC1313-AM1EMF Datasheet PDF : 28 Pages
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TC1313
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics: VIN1 = VIN2 = SHDN1,2 = 3.6V, COUT1 = CIN = 4.7 µF, COUT2 = 1µF, L = 4.7 µH, VOUT1 (ADJ) = 1.8V,
IOUT1 = 100 ma, IOUT2 = 0.1 mA TA = +25°C. Boldface specifications apply over the TA range of -40°C to +85°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Wake-Up Time
tWK
(From SHDN2 mode), (VOUT2)
31
100
µs
IOUT1 = IOUT2 = 50 mA
Settling Time
tS
(From SHDN2 mode), (VOUT2)
100
µs
IOUT1 = IOUT2 = 50 mA
Note 1:
2:
3:
4:
The Minimum VIN has to meet two conditions: VIN 2.7V and VIN VRX + VDROPOUT, VRX = VR1 or VR2.
VRX is the regulator output voltage setting.
TCVOUT2 = ((VOUT2max – VOUT2min) * 106)/(VOUT2 * DT).
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 0.1 mA to the maximum specified output current.
5: Dropout voltage is defined as the input-to-output voltage differential at which the output voltage drops 2% below its
nominal value measured at a 1V differential.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air. (i.e. TA, TJ, θJA). Exceeding the maximum allowable power
dissipation causes the device to initiate thermal shutdown.
7: The integrated MOSFET switches have an integral diode from the LX pin to VIN, and from LX to PGND. In cases where
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to limit the junction temperature for these cases.
8: VIN1 and VIN2 are supplied by the same input source.
TEMPERATURE SPECIFICATIONS
Electrical Specifications: Unless otherwise indicated, all limits are specified for: VIN = +2.7V to +5.5V
Parameters
Sym
Min
Typ
Max Units
Conditions
Temperature Ranges
Operating Junction Temperature Range
TJ
-40
+125 °C Steady state
Storage Temperature Range
TA
-65
+150 °C
Maximum Junction Temperature
TJ
+150 °C Transient
Thermal Package Resistances
Thermal Resistance, 10L-DFN
θJA
41
°C/W Typical 4-layer board with Internal
Ground Plane and 2 Vias in Thermal
Pad
Thermal Resistance, 10L-MSOP
θJA
113
°C/W Typical 4-layer board with Internal
Ground Plane
DS21974A-page 6
© 2005 Microchip Technology Inc.
 

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