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TC1313-AM1EMF View Datasheet(PDF) - Microchip Technology

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TC1313-AM1EMF
Microchip
Microchip Technology Microchip
TC1313-AM1EMF Datasheet PDF : 28 Pages
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5.8 Design Example
VOUT1 = 2.0V @ 500 mA
VOUT2 = 3.3V @ 300 mA
VIN = 5V ±10%
L = 4.7µH
Calculate PWM mode inductor ripple current
Nominal Duty
Cycle = 2.0V/5.0V = 40%
P-channel
Switch-on time = 0.40 x 1/(2 MHz) = 200 ns
VL = (VIN-VOUT1) = 3V
ΔIL = (VL/L) x TON = 128 mA
Peak inductor current:
IL(PK) = IOUT1+1/2ΔIL = 564 mA
Switcher power loss:
Use efficiency estimate for 1.8V from Figure 2-7
Efficiency = 84%, PDISS1 = 190 mW
Resistor Divider:
RTOP = 200 kΩ
RBOT = 133 kΩ
LDO Output:
PDISS2 = (VIN(MAX)
VOUT2(MIN)) x IOUT2(MAX)
PDISS2 = (5.5V – (0.975) x 3.3V) x 300 mA
PDISS2 = 684.8 mW
Total
Dissipation = 190 mW + 685 mW = 875 mW
Junction Temp Rise and Maximum Ambient
Operating Temperature Calculations
10-Pin MSOP (4-Layer Board with internal Planes)
RθJA = 113° C/Watt
Junction Temp.
Rise = 875 mW x 113° C/Watt = 98.9°C
Max. Ambient
Temperature = 125°C - 98.9°C
Max. Ambient
Temperature = 26.1°C
10-Pin DFN
RθJA = 41° C/Watt (4-Layer Board with
internal planes and 2 vias)
Junction Temp.
Rise = 875 mW x 41° C/Watt = 35.9°C
Max. Ambient
Temperature = 125°C - 35.9°C
Max. Ambient
Temperature = 89.1°C
This is above the +85°C max. ambient temperature.
© 2005 Microchip Technology Inc.
TC1313
DS21974A-page 19
 

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