T1610T-6I View Datasheet(PDF) - STMicroelectronics
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T1610T-6I Datasheet PDF : 9 Pages
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T16T
Characteristics
Figure 7.
Non repetitive surge peak on state Figure 8.
current for a sinusoidal
Relative variation of gate trigger
current and gate trigger voltage
versus junction temperature
10000 ITSM(A), I²t (A²s)
1000
dl /dt limitation: 50 A / µs
100
10
0.01
0.10
Tj initial = 25 °C
ITSM
I²t
tp(ms)
1.00
10.00
3.0 IGT, VGT[Tj] / IGT, VGT[Tj = 25 °C]
2.5
2.0
IGT Q3
IGT Q1-Q2
1.5
1.0
IGT Q1-Q2-Q3
0.5
0.0
-50
-25
0
Tj(°C)
25
50
75
100
125
Figure 9.
Relative variation of holding
Figure 10. Relative variation of critical rate of
current and latching current versus
decrease of main current versus
junction temperature
junction temperature
IH, IL[Tj] / IH, IL[Tj = 25 °C]
2.5
2.0
1.5
dV / dt [Tj] / dV / dt [Tj = 125 °C]
7
6
5
4
VD = VR = 402 V
1.0
3
IL
2
0.5
IH
1
Tj(°C)
0.0
0
-50
-25
0
25
50
75
100
125
25
1
Tj(°C)
50
75
100
125
Figure 11. Relative variation of critical rate of Figure 12. Leakage current versus junction
decrease of main current versus
temperature for different values of
junction temperature
blocking voltage (typical values)
(dl / dt)c [Tj] / (dl / dt)c [Tj = 125 °C]
8
7
6
5
4
3
2
1
Tj(°C)
0
25
50
75
100
125
IDRM/IRRM [Tj; VDRM / VRRM] / IDRM/IRRM
1.0E+00
[Tj = 125 °C; 700 V]
VDRM = VRRM = 600 V
1.0E-01
VDRM = VRRM = 400 V
1.0E-02
VDRM = VRRM = 200 V
1.0E-03
25
50
75
100
125
Doc ID 16488 Rev 2
5/9
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