T1235T-6I View Datasheet(PDF) - STMicroelectronics

Part Name

Description

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T1235T-6I

Snubberless™, logic level and standard 12 A Triacs

STMicroelectronics 

T12T

Characteristics

Table 3.

Symbol

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Test conditions

Quadrant

T12xxT

Unit

T1210T T1220T T1225T T1235T

IGT (1) VD = 12 V RL = 30 Ω

VGT

VGD

IH (2)

VD = VDRM, RL = 3.3 kΩ,

Tj = 25 °C

VD = VDRM, RL = 3.3 kΩ,

Tj = 125 °C

IT = 500 mA

I - II - III

10

20

25

35

MAX.

mA

IV

40

ALL

MAX.

1.3

V

ALL

I - III

MIN.

0.2

V

MAX. 10

15

20

30

mA

20

35

40

50

IL

IG = 1.2 IGT

IV

MAX.

40

mA

II

30

40

60

80

dV/dt (2)

VD = 67% VDRM, gate open

Tj = 125 °C

Tj = 150 °C(3)

MIN.

100

50

1000

500

100

50

2000

1000

V/µs

(dV/dt)c = 0.1 V/µs

7

7

(dV/dt)c = 10 V/µs

Tj = 125 °C

3

3

Without snubber

(di/dt)c (2)

(dV/dt)c = 0.1 V/µs

6

12

MIN.

A/ms

3

3

(dV/dt)c = 10 V/µs

Without snubber

Tj = 150 °C(3)

1

1

3

10

1. minimum IGT is guaranted at 5% of IGT max.

2. for both polarities of A2 referenced to A1.

3. derating information for excess temperature above Tj max.

Table 4. Static characteristics

Symbol

Test conditions

VT (1)

VTO (1)

RD (1)

ITM = 17 A, tp = 380 µs

Threshold voltage

Dynamic resistance

IDRM

IRRM

VDRM = VRRM

VD = 0.9 x VDRM

Tj = 25 °C

Tj = 125 °C

Tj = 125 °C

Tj = 25 °C

Tj = 125 °C

Tj = 150 °C(2)

1. for both polarities of A2 referenced to A1.

2. derating information for excess temperature above Tj max.

MAX.

MAX.

MAX.

MAX.

TYP.

Value

Unit

1.55

V

0.85

V

35

mΩ

5

µA

1

mA

1.9

Doc ID 16487 Rev 2

3/9

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