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T1235H6T View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
T1235H6T
ST-Microelectronics
STMicroelectronics ST-Microelectronics
T1235H6T Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
T1235H, T1250H Series
Characteristics
Table 3. Static Characteristics
Symbol
Test Conditions
VT (1)
Vt0 (1)
Rd (1)
IDRM
IRRM (2)
ITM = 17 A, tp = 380 µs
Tj = 25° C
Threshold voltage
Tj = 150° C
Dynamic resistance
Tj = 150° C
VDRM = VRRM
Tj = 25° C
Tj = 150° C
VD/VR = 400 V (at peak mains voltage) Tj = 150° C
VD/VR = 200 V (at peak mains voltage) Tj = 150° C
1. for both polarities of A2 referenced to A1.
2. tp = 380 µs.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
Table 4. Thermal resistance
Symbol
Parameter
Rth(j-c)
Rth(j-a)
Junction to case (AC)
Junction to ambient
S = 1 cm2
D2PAK / TO-220AB
TO-220AB Ins
D2PAK
TO-220AB / TO-220AB Ins
Value
Unit
1.5
V
0.80
V
30
mΩ
5
µA
3.9
3.2
mA
2.7
Value
1.4
3.3
45
60
Unit
° C/W
Figure 1.
P(W)
14
α=180 °
12
Maximum power dissipation versus Figure 2.
RMS on-state current (full cycle)
IT(RMS) (A)
14
12
RMS on-state current versus case
temperature (full cycle)
TO-220AB/D²PAK
10
10
TO-220AB
Insulated
8
8
6
6
4
180°
2
IT(RMS)(A)
0
0 1 2 3 4 5 6 7 8 9 10 11 12
4
2
α=180 °
0
0
25
TC(°C)
50
75
100
125
150
3/10
 

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