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T1235H View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
T1235H
ST-Microelectronics
STMicroelectronics ST-Microelectronics
T1235H Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics
1
Characteristics
T1235H, T1250H Series
Table 1. Absolute Maximum Ratings
Symbol
Parameter
IT(RMS) RMS on-state current (full sine wave)
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25° C)
I²t
I²t Value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 2 x IGT , tr 100 ns
VDSM/VRSM
Non repetitive surge peak off-state
voltage
D2PAK, TO-220AB
TO-220AB Ins
F = 50 Hz
Tc = 130° C
Tc = 120° C
t = 20 ms
F = 60 Hz
t = 16.7 ms
tp = 10 ms
F = 120 Hz
Tj = 150° C
tp = 10 ms
Tj = 25° C
IGM
PG(AV)
Tstg
Tj
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
tp = 20 µs
Tj = 150° C
Tj = 150° C
Value
12
120
126
95
50
VDRM/VRRM
+ 100
4
1
- 40 to + 150
- 40 to + 150
Unit
A
A
A²s
A/µs
V
A
W
°C
Table 2. Electrical Characteristics (Tj = 25° C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
Value
T1235H T1250H
IGT (1)
VGT
VGD
IH (2)
IL
dV/dt (2)
(dI/dt)c (2)
VD = 12 V RL = 33 Ω
VD = VDRM, RL = 3.3 kΩ
IT = 500 mA
IG = 1.2 IGT
VD = 67% VDRM, gate open, Tj = 150° C
Without snubber, Tj = 150° C
I - II - III
I - II - III
I - II - III
I - III
II
MAX.
MAX.
MIN.
MAX.
MAX.
MIN.
MIN.
35
50
1.0
0.15
35
75
50
90
80
110
1000
1500
16
21
1. minimum IGT is guaranted at 20% of IGT max.
2. for both polarities of A2 referenced to A1.
Unit
mA
V
V
mA
mA
V/µs
A/ms
2/10
 

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