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T1010D View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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T1010D
ST-Microelectronics
STMicroelectronics ST-Microelectronics
T1010D Datasheet PDF : 5 Pages
1 2 3 4 5
Fig.1 : Maximum RMS power dissipation versus
RMS on-state current.
T10xxxH
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperature
(Tamb and Tcase) for different thermal resistances
heatsink + contact.
P(W)
14
12
180 O
= 180o
10
= 120o
8
= 90o
6
= 60o
4
= 30o
2
I T(RMS) (A)
0
0 1 2 3 4 5 6 7 8 9 10
P (W)
14
12
10
Tcase (oC)
Rth = 0 o C/W
2.5o C/W
5o C/W
7.5o C/W
-90
-95
-100
8
-105
6
-110
4
-115
2
-120
Tamb (oC)
0
-125
0 20 40 60 80 100 120 140
Fig.3 : RMS on-state current versus case tempera-
ture.
I T(RMS)(A)
12
10
8
6
= 180o
4
2
Tcase (oC)
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130
Fig.4 : Relative variation of thermal impedance
versus pulse duration.
Zth/Rth
1
Zt h( j-c)
0.1
Zt h( j-a)
0.01
1E-3
1E-2
1E-1
1E +0
tp (s)
1E+1 1E+2 5E+2
Fig.5 : Relative variation of gate trigger current and
holding current versus junction temperature.
Igt[Tj]
Igt[Tj=25 o C]
2.6
2.4
2.2
2.0
Ih[Tj]
Ih[Tj=25 o C]
1.8
Igt
1.6
1.4
1.2 Ih
1.0
0.8
0.6
Tj(oC)
0.4
-40 -20 0 20 40 60 80 100 120 140
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
ITS M(A)
10 0
80
Tj initial = 25oC
60
40
20
Number of cycles
0
1
10
10 0
100 0
3/5
®
 

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