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T1010D View Datasheet(PDF) - STMicroelectronics

Part NameDescriptionManufacturer
T1010D STANDARD TRIACS ST-Microelectronics
STMicroelectronics ST-Microelectronics
T1010D Datasheet PDF : 5 Pages
1 2 3 4 5
T10xxxH
THERMAL RESISTANCES
Symbol
Rth(j-a)
Rth(j-c)
Rth(j-c)
Parameter
Junction to ambient
Junction to case for D.C
Junction to case for A.C 360° conduction angle (F=50Hz)
Value
60
3.3
2.5
Unit
°C/W
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Sensitivity
10 12 13
IGT
VD=12V (DC) RL=33Tj= 25°C I-II-III MAX 25 50 50
IV
MAX 25 50 75
VGT
VD=12V (DC) RL=33Tj= 25°C I-II-III-IV MAX
1.5
VGD
VD=VDRM RL=3.3k
Tj= 125°C I-II-III-IV MIN
0.2
tgt
VD=VDRM IG = 500mA Tj= 25°C I-II-III-IV TYP
2
IT = 14A
dIG/dt = 3A/µs
IH *
IT= 250 mA Gate open Tj= 25°C
MAX 25 50 75
IL
IG= 1.2 IGT
Tj= 25°C I-III-IV TYP 25 50 75
II
TYP 50 100 150
VTM * ITM= 14A tp= 380µs
Tj= 25°C
MAX
1.5
IDRM
IRRM
VD = VDRM
VR = VRRM
Tj= 25°C
Tj= 110°C
MAX
10
MAX
2
dV/dt *
VD=67%VDRM
Gate open
Tj= 110°C
MIN 200 500 500
(dV/dt)c * (dI/dt)c = 4.4 A/ms
Tj= 110°C
MIN 2
5
10
* For either polarity of electrode A2 voltage with reference to electrode A1
Unit
mA
V
V
µs
mA
mA
V
µA
mA
V/µs
V/µs
ORDERING INFORMATION
T
TRIAC MESA GLASS
CURRENT
2/5
10 12 M
SENSITIVITY
®
H
PACKAGE :
H = TO220 Non-insulated
VOLTAGE
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