T1010H View Datasheet(PDF) - STMicroelectronics
Part Name
Description
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T1010H Datasheet PDF : 10 Pages
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T1010H
Characteristics
Table 4. Static characteristics
Symbol
Test conditions
VT (1)
Vt0 (1)
Rd (1)
ITM = 14.1 A, tp = 380 µs
Threshold voltage
Dynamic resistance
Tj = 25 °C
Tj = 150 °C
Tj = 150 °C
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C
Tj = 150 °C
VD/VR = 400 V (at peak mains voltage) Tj = 150 °C
VD/VR = 200 V (at peak mains voltage) Tj = 150 °C
1. for both polarities of A2 referenced to A1.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
Table 5. Thermal resistance
Symbol
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
Parameter
S = 1 cm2
D2PAK / TO-220AB
D2PAK
TO-220AB
Value
Unit
1.5
V
0.80
V
41.0
mΩ
5
µA
3.6
3.0
mA
2.5
Value
1.50
45
60
Unit
°C/W
Figure 1.
P(W)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
1
Maximum power dissipation versus Figure 2. On-state rms current versus case
on-state rms current (full cycle)
temperature (full cycle)
IT(RMS)(A)
2
3
4
5
6
7
8
9
10
IT(RMS)(A)
12
11
10
9
8
7
6
5
4
3
2
1
0
0
25
TC(°C)
50
75
100
125
150
Doc ID 15715 Rev 1
3/10
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