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STW7N95K3 View Datasheet(PDF) - STMicroelectronics

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STW7N95K3 Datasheet PDF : 15 Pages
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Electrical characteristics
2
Electrical characteristics
STF7N95K3, STP7N95K3, STW7N95K3
(Tcase = 25 °C unless otherwise specified)
Table 4.
Symbol
On /off states
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = Max rating
drain current (VGS = 0) VDS = Max rating, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 100 µA
Static drain-source on
resistance
VGS = 10 V, ID = 3.6 A
Min. Typ. Max. Unit
950
V
1 µA
50 µA
10 µA
3
4
5
V
1.1 1.35
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1)
Forward
transconductance
VDS = 15 V, ID = 3.6 A
5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
1031
pF
79
pF
0.9
pF
Co(tr)(2)
Equivalent
capacitance time
related
VDS = 0 to 760 V, VGS = 0
60
pF
Co(er)(3)
Equivalent
capacitance energy
related
VDS = 0 to 760 V, VGS = 0
36
pF
f=1 MHz Gate DC Bias=0 Test
RG Gate input resistance signal level = 20 mV open
drain
2.4
Qg
Total gate charge
VDD = 760 V, ID = 7.2 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 20)
34
nC
6
nC
20
nC
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
3. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/15
 

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