STW7NA80FI View Datasheet(PDF) - STMicroelectronics
Part Name
Description
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| STW7NA80FI Datasheet PDF : 0 Pages | |||
STW7NA80-STH7NA80FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
( di / dt ) o n
Qg
Qgs
Qgd
P ar am et e r
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
VDD = 400 V ID = 3.5 A
RG = 47 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 640 V ID = 7 A
RG = 47 Ω
VGS = 10 V
(see test circuit, figure 5)
VDD = 640 V ID = 7 A VGS = 10 V
Min.
Typ.
3.5
9.5
Max.
45
125
170
58
78
8
27
Unit
ns
ns
A/µs
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 640 V ID = 6 A
RG = 47 Ω VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
90
25
125
Max.
120
35
165
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 7 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 7 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
Max.
6.5
26
Unit
A
A
1.6
V
850
ns
15
µC
35
A
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
3/10
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