STW7NA80 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

View to exact match

STW7NA80

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

STMicroelectronics 

STW7NA80

®

STH7NA80FI

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE

STW 7NA80

S TH7NA 80F I

V DSS

800 V

800 V

RDS(on)

< 1.9 Ω

< 1.9 Ω

ID

6.5 A

4A

s TYPICAL RDS(on) = 1.68 Ω

s ± 30V GATE TO SOURCE VOLTAGE RATING

s 100% AVALANCHE TESTED

s REPETITIVE AVALANCHE DATA AT 100oC

s LOW INTRINSIC CAPACITANCES

s GATE CHARGE MINIMIZED

s REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS

s HIGH CURRENT, HIGH SPEED SWITCHING

s SWITCH MODE POWER SUPPLIES (SMPS)

s DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

23

1

TO-247

3

2

1

ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Sy mb o l

Pa ram et er

VDS Drain-source Voltage (VGS = 0)

VDGR Drain- gate Voltage (RGS = 20 kΩ)

VGS G ate-source Volt age

ID

Drain Current (continuous) at Tc = 25 oC

ID

Drain Current (continuous) at Tc = 100 oC

IDM (•)

Ptot

Drain Current (pulsed)

T otal Dissipat ion at Tc = 25 oC

Derating Factor

VISO I nsulation W ithstand Voltage (DC)

Tstg Storage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

October 1998

Valu e

ST W7NA80 STH7NA80FI

8 00

8 00

± 30

6.5

4

4

2 .5

26

26

150

60

1.2

0. 48



4000

-65 to 150

1 50

Unit

V

V

V

A

A

A

W

W /o C

V

oC

oC

1/10

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