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STP26NM60N View Datasheet(PDF) - STMicroelectronics

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STP26NM60N Datasheet PDF : 23 Pages
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Electrical characteristics STB26NM60N, STF26NM60, STI26NM60N, STP26NM60N, STW26NM60N
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD Source-drain current
ISDM (1) Source-drain current (pulsed)
-
VSD (2) Forward on voltage
ISD = 20 A, VGS = 0
-
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, di/dt = 100 A/µs
VDD = 60 V
-
(see Figure 20)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 20 A, di/dt = 100 A/µs
VDD = 60 V, Tj = 150 °C
-
(see Figure 20)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
20 A
80 A
1.5 V
370
ns
5.8
µC
31.6
A
450
ns
7.5
µC
32.5
A
6/23
Doc ID 15642 Rev 5
 

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