STU10NA50 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
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TYPE
STU10NA50
STU10NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
VDSS
500 V
RDS(on)
< 0.6 Ω
ID
10.2 A
PRELIMINARY DATA
s TYPICAL RDS(on) = 0.5 Ω
s ± 30V GATE TO SOURCE VOLTAGE RATING
s REPETITIVE AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
The Max220TM package is a new high volume
power package exibiting the same footprint as the
industry standard TO-220, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages. The increased die
capacity makes the device ideal to reduce
component count in multiple paralleled TO-220
designs and save board space with respect to
larger packages.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
123
Max220TM
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(•)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
October 1997
Value
500
500
± 30
10.2
6.4
40.8
145
1.16
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/oC
oC
oC
1/5
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