S4C3F60L View Datasheet(PDF) - STMicroelectronics
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Description
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S4C3F60L
STMicroelectronics
S4C3F60L Datasheet PDF : 11 Pages
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STS4C3F60L
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
N-CHANNEL P-CHANNEL
VDS
Drain-source Voltage (VGS = 0)
60
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
60
VGS
Gate-source Voltage
± 16
ID
Drain Current (continuous) at TC = 25°C
Single Operating
4
3
ID
Drain Current (continuous) at TC = 100°C
Single Operating
2.5
1.9
IDM ( )
Drain Current (pulsed)
16
12
PTOT
Total Dissipation at TC = 25°C
2
Tj
Operating Junction Temperature
Tstg
Storage Temperature
( ) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
-55 to 150
Unit
V
V
V
A
A
A
W
°C
Table 4: Thermal Data
Rthj-amb (1) Thermal Resistance Junction-ambient
(1) When mounted on 1 inch² pad of 2 oz. copper, t ≤ 10 s
62.5
°C/W
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
n-ch 60
V
Breakdown Voltage
p-ch 60
V
IDSS
Zero Gate Voltage
VDS= Max Rating
n-ch
Drain Current (VGS = 0) VDS= Max Rating, TC= 125°C p-ch
1
µA
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS= ± 16V
VGS= ± 16V
n-ch
p-ch
±100 nA
±100 nA
VGS(th)
Gate Threshold Voltage VDS = VGS, ID= 250 µA
n-ch 1
V
p-ch 1.5
V
RDS(on)
Static Drain-source On
Resistance
VGS= 10 V, ID= 2 A
VGS= 10 V, ID= 1.5 A
VGS= 4.5 V, ID= 2 A
VGS= 4.5 V, ID= 1.5 A
n-ch
p-ch
n-ch
p-ch
0.045 0.055
Ω
0.100 0.120
Ω
0.050 0.065
Ω
0.130 0.160
Ω
Table 6: Dynamic
Symbol
Parameter
Test Conditions
gfs (1)
Forward
Transconductance
VDS = 30 V, ID= 2 A
VDS = 10 V, ID= 3 A
n-ch
p-ch
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0 n-ch
p-ch
Coss
Output Capacitance
n-ch
p-ch
Crss
Reverse Transfer
Capacitance
n-ch
p-ch
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min.
Typ.
7
7.2
1030
630
140
121
40
49
Max.
Unit
S
S
pF
pF
pF
pF
pF
pF
2/11
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