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N1HNK60 データシートの表示(PDF) - STMicroelectronics

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N1HNK60 N-CHANNEL MOSFET ST-Microelectronics
STMicroelectronics ST-Microelectronics
N1HNK60 Datasheet PDF : 15 Pages
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STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
td(on)
tr
td(off)
tr
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 15 V, ID= 0.5 A
VDS = 25V, f = 1 MHz, VGS = 0
VDD = 300 V, ID = 0.5 A,
RG= 4.7 Ω, VGS = 10 V
(Resistive Load see, Figure
21)
VDD = 480V, ID = 1 A,
VGS = 10V, RG= 4.7
(see, Figure 23)
Min.
Table 8: Source Drain Diode
Symbol
Parameter
Test Conditions
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1) Forward On Voltage
ISD = 1.0 A, VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 25V, Tj = 25°C
(see test circuit, Figure 22)
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 1.0 A, di/dt = 100 A/µs
VDD = 25V, Tj = 150°C
(see test circuit, Figure 22)
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Min.
Typ.
1
156
23.5
3.8
6.5
5
19
25
7
1.1
3.7
Typ.
140
240
3.3
229
377
3.3
Max.
10
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Max. Unit
1
A
4
A
1.6
V
ns
µC
A
ns
µC
A
3/15
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