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N1HNK60 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
N1HNK60
ST-Microelectronics
STMicroelectronics ST-Microelectronics
N1HNK60 Datasheet PDF : 0 Pages
STD1NK60 - STD1NK60-1 - STQ1HNK60R - STN1HNK60
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
Tj
Operating Junction Temperature
Tstg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 1.0A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
DPAK / IPAK
1.0
0.63
4
30
0.24
Value
TO-92
600
600
± 30
0.4
0.25
1.6
3
0.025
3
-55 to 150
SOT-223
0.4
0.25
1.6
3.3
0.025
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb Thermal Resistance Junction-ambient Max
Rthj-lead Thermal Resistance Junction-lead Max
Tl
Maximum Lead Temperature For Soldering
Purpose
(#) When mounted on FR-4 board of 1 in2 , 2oz Cu, t < 10 sec
DPAK/IPAK
4.16
100
--
275
TO-92
SOT-223
--
--
120
37.87 (#)
40
--
260
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max Value
1
25
Unit
V
V
V
A
A
A
W
W/°C
V/ns
°C
Unit
°C/W
°C/W
°C/W
°C
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
V(BR)DSS Drain-source
ID = 1mA, VGS = 0
600
V
Breakdown Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
1
µA
50
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30V
±100 nA
VGS(th) Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.25
3
3.7
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 0.5 A
8
8.5
2/15
 

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