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P5NK80Z View Datasheet(PDF) - STMicroelectronics

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P5NK80Z Datasheet PDF : 15 Pages
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STP5NK80Z - STP5NK80ZFP
2
Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
ID = 1mA, VGS= 0
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
Tc = 125°C
IGSS
VGS(th)
RDS(on)
Gate body leakage current
(VGS = 0)
VGS = ± 20V
Gate threshold voltage
VDS = VGS, ID = 100µA
Static drain-source on
resistance
VGS = 10V, ID = 2.15 A
Min. Typ. Max. Unit
800
V
1
µA
50 µA
±10 µA
3 3.75 4.5 V
1.9 2.4
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs (1) Forward transconductance VDS =15V, ID = 2.15A
4.25
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz, VGS=0
910
98
20
pF
pF
pF
Cosseq(2).
Equivalent output
capacitance
VGS=0, VDS =0V to 400V
40
pF
td(on)
tr
td(off)
tr
Qg
Qgs
Qgd
td(Voff)
tr
Turn-on delay time
Rise time
Turn-on delay time
fall time
Total gate charge
Gate-source charge
Gate-drain charge
Off-voltage rise time
Fall time
Cross-over time
VDD=400 V, ID= 2 A,
RG=4.7Ω, VGS=10V
(see Figure 18)
VDD=640V, ID = 4.3A
VGS =10V
VDD=640 V, ID= 4.3 A,
RG=4.7Ω, VGS=10V
(see Figure 20)
18
ns
25
ns
45
ns
30
ns
32.4 45.5 nC
5
nC
18.5
nC
22
ns
10
ns
32
ns
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
5/15
 

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