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STB75NF75T4 View Datasheet(PDF) - STMicroelectronics

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Description
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STB75NF75T4 Datasheet PDF : 0 Pages
STB75NF75 - STP75NF75 - STP75NF75FP
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
D2PAK /TO-220 TO-220FP
VDS Drain-source voltage (VGS = 0)
VDGR Drain-gate voltage (RGS = 20K)
VGS
ID (1)
ID(1)
Gate-source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC=100°C
IDM(2) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
dv/dt (3) Peak diode recovery voltage slope
EAS (4) Single pulse avalanche energy
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink (t=1s;TC=25°C)
TJ Operating junction temperature
Tstg Storage temperature
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD 80A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX
4. Starting TJ = 25 oC, ID = 40A, VDD = 37.5V
75
75
± 20
80
70
320
300
2.0
12
700
--
80
70
320
45
0.3
2000
-55 to 175
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
V
°C
Table 2. Thermal data
Symbol
Parameter
RthJC
RthJA
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose(1)
1. 1.6mm from case for 10sec)
Value
Unit
D2PAK /TO-220 TO-220FP
0.5
62.5
3.33 °C/W
°C/W
300
°C
3/16
 

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