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STP36NF06 View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
STP36NF06
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STP36NF06 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
STB36NF06L
STP36NF06L
N-CHANNEL 60V - 0.032 - 30A D²PAK/TO-220
STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
ID
STB36NF06L
STP36NF06L
60 V
60 V
< 0.040
< 0.040
30 A
30 A
s TYPICAL RDS(on) = 0.032
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION
s SURFACE-MOUNTING D²PAK (TO-263)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
3
1
D2PAK
TO-263
(Suffix “T4”)
3
2
1
TO-220
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps therefore a remarkable manufacturing
reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s POWER TOOLS
s AUTOMOTIVE ENVIRONMENT
Ordering Information
SALES TYPE
STB36NF06L
STP36NF06L
MARKING
STB36NF06L
STP36NF06L
PACKAGE
TO-263
TO-220
PACKAGING
TAPE & REEL
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS(2)
Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
Value
60
60
± 18
30
21
120
70
0.47
10
235
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD 30A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 oC, ID = 15A, VDD = 30V
June 2003
1/8
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
 

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