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STP36NF06FP View Datasheet(PDF) - STMicroelectronics

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STP36NF06FP Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
STP36NF06 STP36NF06FP
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
td(on)
Turn-on Delay Time
VDD = 30 V
ID = 18 A
10
ns
tr
Rise Time
RG = 4.7
VGS = 10 V
40
ns
(Resistive Load, Figure 3)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD= 30 V ID= 36 A VGS= 10V
23
31
nC
6
nC
9
nC
SWITCHING OFF
Symbol
Parameter
td(off)
tf
Turn-off Delay Time
Fall Time
Test Conditions
VDD = 30 V
ID = 18 A
RG = 4.7
VGS =10 V
(Resistive Load, Figure 3)
Min.
Typ.
27
9
Max.
Unit
ns
ns
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current (pulsed)
VSD (*) Forward On Voltage
ISD = 30 A
VGS = 0
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(•)Pulse width limited by safe operating area.
ISD = 30 A
di/dt = 100A/µs
VDD = 30 V
Tj = 150°C
(see test circuit, Figure 5)
Min.
Typ.
65
155
4.8
Max.
30
120
1.5
Unit
A
A
V
ns
nC
A
Safe Operating Area for TO-220
Safe Operating Area for TO-220FP
3/9
 

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