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STD11NM65N View Datasheet(PDF) - STMicroelectronics

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Description
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STD11NM65N Datasheet PDF : 21 Pages
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STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N
Electrical characteristics
Symbol
Parameter
Table 6. Switching times
Test conditions
td (on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 325 V, ID = 5.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 20 and
Figure 23)
Min. Typ. Max. Unit
- 15.5 - ns
- 10.8 - ns
-
11
- ns
- 47 - ns
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
-
(1)
ISDM Source-drain current (pulsed)
(2)
VSD Forward on voltage
ISD = 11 A, VGS = 0
-
11 A
44 A
1.6 V
trr Reverse recovery time
- 418
ns
ISD = 11 A, di/dt = 100 A/μs
Qrr Reverse recovery charge
VDD = 60 V (see Figure 23)
-
4.4
μC
IRRM Reverse recovery current
- 21
A
trr Reverse recovery time
- 530
ISD = 11 A, di/dt = 100 A/μs
ns
Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C
- 5.6
μC
IRRM Reverse recovery current
(see Figure 23)
- 21
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Doc ID 13476 Rev 4
5/21
21
 

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