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STD11NM65N View Datasheet(PDF) - STMicroelectronics

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Description
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STD11NM65N Datasheet PDF : 21 Pages
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Electrical characteristics
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
Drain-source
V(BR)DSS breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 650 V
drain current (VGS = 0) VDS = 650 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 25 V
Gate threshold voltage VDS = VGS, ID = 250 μA
Static drain-source on-
resistance
VGS = 10 V, ID = 5.5 A
Min. Typ. Max. Unit
650
V
1 μA
100 μA
± 100 nA
2
3
4V
0.425 0.455 Ω
Symbol
Parameter
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz,
VGS = 0
pF
- 800 - pF
pF
-
50
- pF
-
2.9
- pF
(1) Equivalent output
Coss eq. capacitance
VDS = 0 to 520 V, VGS = 0
- 133 - pF
Intrinsic gate
RG resistance
f = 1 MHz open drain
-
4.2
-
Ω
Qg Total gate charge
VDD = 520 V, ID = 11 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 19)
-
29
- nC
-
3.9
- nC
-
16
- nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/21
Doc ID 13476 Rev 4
 

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