datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

STD11NM65N View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
STD11NM65N Datasheet PDF : 21 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Value
Parameter
TO-220, DPAK
TO-220FP
I²PAKFP
Unit
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
(2)
IDM
Drain current (pulsed)
PTOT Total dissipation at TC = 25 °C
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj max)
EAS
(3)
dv/dt
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Peak diode recovery voltage slope
650
± 25
11
7
44
110
(1)
11
(1)
7
(1)
44
25
3
147
15
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited by maximum junction temperature.
2. Pulse width limited by safe operating area.
3. ISD 11 A, di/dt 400 A/μs; VPeak < V(BR)DSS, VDD 80% V(BR)DSS
- 55 to 150
150
V
V
A
A
A
W
A
mJ
V/ns
V
°C
°C
Symbol
Table 3. Thermal data
Parameter
Value
Unit
DPAK TO-220FP I²PAKFP TO-220
Rthj-case Thermal resistance junction-case max
Thermal resistance junction-ambient
Rthj-amb max
(1)
Rthj-pcb Thermal resistance junction-pcb max
1. When mounted on 1inch² FR-4 board, 2 oz Cu
1.14
50
5
62.5
1.14 °C/W
°C/W
°C/W
Doc ID 13476 Rev 4
3/21
21
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]