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STD10NM60N View Datasheet(PDF) - STMicroelectronics

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STD10NM60N Datasheet PDF : 17 Pages
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
VDD = 300 V, ID = 4 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16)
Min. Typ. Max Unit
10
ns
12
ns
-
-
32
ns
15
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 8 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V
(see Figure 18)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 8 A, di/dt = 100 A/µs
VDD= 60 V TJ = 150 °C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
8A
-
32 A
-
1.3 V
250
ns
- 2.12
µC
17
A
315
ns
- 2.6
µC
16.5
A
Doc ID 15764 Rev 5
5/17
 

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