datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

STD10NM60N View Datasheet(PDF) - STMicroelectronics

Part Name
Description
View to exact match
STD10NM60N Datasheet PDF : 17 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220 TO-220FP IPAK DPAK
VGS Gate- source voltage
± 25
ID
Drain current (continuous) at TC = 25 °C
10
10 (1)
10
ID
Drain current (continuous) at TC = 100 °C
5
5 (1)
5
IDM (2) Drain current (pulsed)
32
32 (1)
32
PTOT Total dissipation at TC = 25 °C
dv/dt(3) Peak diode recovery voltage slope
70
25
70
15
VISO
TJ
Tstg
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
Operating junction temperature
Storage temperature
2500
- 55 to 150
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. ISD 10 A, di/dt 400 A/µs, VDS peak V(BR)DSS, VDD = 80% V(BR)DSS.
V
A
A
A
W
V/ns
V
°C
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-amb
Rthj-pcb
TJ
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
Value
Unit
TO-220 TO-220FP IPAK DPAK
1.79
5
62.50
1.79
100
50
°C/W
°C/W
°C/W
300
°C/W
Table 4. Avalanche characteristics
Symbol
Parameter
IAS
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj Max)
EAS
Single pulse avalanche energy (starting
TJ=25 °C, ID=IAS, VDD=50 V)
Value
Unit
4
A
200
mJ
Doc ID 15764 Rev 5
3/17
 

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]