STP3NK100Z View Datasheet(PDF) - STMicroelectronics
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STP3NK100Z
STMicroelectronics
STP3NK100Z Datasheet PDF : 16 Pages
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STF3NK100Z - STP3NK100Z - STD3NK100Z
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
Turn-on delay time
Rise time
td(off)
tr
Turn-off delay time
Fall time
Test conditions
VDD= 500V, ID= 1.25A,
RG=4.7Ω, VGS=10V
(see Figure 16)
VDD= 500V, ID= 1.25A,
RG=4.7Ω, VGS=10V
(see Figure 16)
Min. Typ. Max. Unit
15
ns
7.5
ns
39
ns
32
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2) Forward on voltage
ISD= 2.5A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5A, di/dt = 100A/µs,
VDD= 100V, Tj= 25°C
(see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5A, di/dt = 100A/µs,
VDD= 100V, Tj=150°C
(see Figure 21)
1. Pulse width limited by package
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Min. Typ. Max. Unit
2.5 A
10 A
1.6 V
584
ns
2.3
µC
8
A
628
ns
2.5
µC
8.1
A
Table 9. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO Gate-source breakdown
(1) voltage
IGS = ±1mA (open drain)
30
V
1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the
usage of external components.
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