STD3NK100Z View Datasheet(PDF) - STMicroelectronics
Part Name
Description
View to exact match
STD3NK100Z
STMicroelectronics
STD3NK100Z Datasheet PDF : 16 Pages
| |||
STF3NK100Z - STP3NK100Z - STD3NK100Z
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220/DPAK TO-220FP
VDS
Drain-source voltage (VGS = 0)
VGS
Gate-source voltage
ID
Drain current (continuous) at TC = 25°C
1000
V
± 30
V
2.5
2.5 (1)
A
ID
Drain current (continuous) at TC = 100°C
IDM (2) Drain current (pulsed)
PTOT Total dissipation at TC = 25°C
Derating factor
VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5KΩ)
dv/dt (3) Peak diode recovery voltage slope
1.57
1.57(2)
10
10 (2)
90
25
0.72
0.2
3000
4.5
A
A
W
W/°C
V
V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;TC=25°C)
Tj
Operating junction temperature
Tstg
Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD ≤ 2.5A, di/dt ≤ 200A/µs, VDD = 80% V(BR)DSS
--
2500
V
-55 to 150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
TO-220/DPAK TO-220FP
Rthj-case Thermal resistance junction-case max
1.39
5
°C/W
Rthj-amb Thermal resistance junction-amb max
62.5
°C/W
TL
Maximum lead temperature for soldering purpose
300
Table 4. Avalanche data
Symbol
Parameter
IAR (1) Avalanche current, repetitive or not-repetitive
EAS (2) Single pulse avalanche energy
1. Pulse width limited by Tjmax
2. Starting Tj = 25°C, ID = IAR, VDD = 50V
Value
Unit
2.5
A
110
mJ
3/16
|
|
Share Link: