STD4NK60Z-1_13 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
View to exact match
STD4NK60Z-1_13
STMicroelectronics
| STD4NK60Z-1_13 Datasheet PDF : 0 Pages | |||
STB4NK60Z, STB4NK60Z-1,
STD4NK60Z, STD4NK60Z-1
N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH™
Power MOSFETs in D²PAK, I²PAK, DPAK and IPAK packages
Datasheet - production data
TAB
3
2
1
IPAK
TAB
3
1
DPAK
TAB
TAB
123
I²PAK
3
1
D²PAK
Features
Order codes VDS RDS(on) max. PTOT
ID
STB4NK60ZT4
STB4NK60Z-1
600 V
2Ω
STD4NK60ZT4
70 W 4 A
STD4NK60Z-1
• 100% avalanche tested
• Very low intrinsic capacitances
• Zener-protected
Figure 1. Internal schematic diagram
D(2, TAB)
Applications
• Switching applications
Description
G(1)
S(3)
AM01476v1
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Order codes
STB4NK60ZT4
STB4NK60Z-1
STD4NK60ZT4
STD4NK60Z-1
Table 1. Device summary
Marking
Packages
B4NK60Z
2
D PAK
2
I PAK
D4NK60Z
DPAK
IPAK
July 2013
This is information on a product in full production.
DocID8882 Rev 8
Packaging
Tape and reel
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Tape and reel
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