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STD4NK80Z View Datasheet(PDF) - STMicroelectronics

Part Name
Description
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STD4NK80Z
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STD4NK80Z Datasheet PDF : 18 Pages
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Electrical ratings
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj=25°C, Id=Iar, Vdd=50V)
Value
Unit
3
A
190
mJ
Table 4. Gate-source zener diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
BVGSO Gate-source breakdown voltage Igs=± 1mA (Open Drain) 30
V
1.1
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
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